Junichi Murota : rechercher sur Z-Library

Tomoyuki Kawashima, Masao Sakuraba, Bernd Tillack, Junichi Murota

Année:

2010

Langue:

english

Fichier:

PDF, 499 KB

english, 2010

Heavy atomic-layer doping of nitrogen in Si1 − xGex film epitaxially grown on Si(100) by ultraclean low-pressure CVD

Journal:

Katsutoshi Sugawara, Masao Sakuraba, Junichi Murota

Année:

2010

Langue:

english

Fichier:

PDF, 635 KB

english, 2010

Electrical characteristics of thermal CVD B-doped Si films on highly strained Si epitaxially grown on Ge(100) by plasma CVD without substrate heating

Journal:

Takayuki Nosaka, Masao Sakuraba, Bernd Tillack, Junichi Murota

Année:

2010

Langue:

english

Fichier:

PDF, 961 KB

english, 2010

Heavy B atomic-layer doping in Si epitaxial growth on Si(100) using electron-cyclotron-resonance plasma CVD

Journal:

Tomoya Hirano, Masao Sakuraba, Bernd Tillack, Junichi Murota

Année:

2010

Langue:

english

Fichier:

PDF, 459 KB

english, 2010

Heavy carbon atomic-layer doping at Si1 − xGex/Si heterointerface

Journal:

Année:

2010

Langue:

english

Fichier:

PDF, 846 KB

english, 2010

Impact of Si cap layer growth on surface segregation of P incorporated by atomic layer doping

Yohei Chiba, Masao Sakuraba, Bernd Tillack, Junichi Murota

Journal:

Tomoyuki Kawashima, Masao Sakuraba, Bernd Tillack, Junichi Murota

Année:

2010

Langue:

english

Fichier:

PDF, 514 KB

english, 2010

Behavior of N atoms after thermal nitridation of Si1 − xGex surface

Journal:

Abe, Yusuke, Sakuraba, Masao, Murota, Junichi

Année:

2012

Langue:

english

Fichier:

PDF, 653 KB

english, 2012

Epitaxial growth of B-doped Si on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition in a SiH4–B2H6–H2 gas mixture without substrate heating

Journal:

Yamamoto, Yuji, Heinemann, Bernd, Murota, Junichi, Tillack, Bernd

Année:

2014

Langue:

english

Fichier:

PDF, 934 KB

english, 2014

Phosphorus atomic layer doping in SiGe using reduced pressure chemical vapor deposition

Journal:

Ueno, Naofumi, Sakuraba, Masao, Murota, Junichi, Sato, Shigeo

Année:

2014

Langue:

english

Fichier:

PDF, 660 KB

english, 2014

Epitaxial growth of Si1−xGex alloys and Ge on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition without substrate heating

Journal:

Kawashima, Tomoyuki, Sakuraba, Masao, Murota, Junichi

Année:

2014

Langue:

english

Fichier:

PDF, 871 KB

english, 2014

Nitrogen doping effect upon hole tunneling characteristics of Si barriers in Si1-xGex/Si resonant tunneling diode

Journal:

Matsuura, Takashi, Honda, Yasuhiko, Murota, Junichi

Année:

2014

Langue:

english

Fichier:

PDF, 667 KB

english, 2014

Atomic-order layer-by-layer role-share etching of silicon nitride using an electron cyclotron resonance plasma

Journal:

Applied Physics Letters

Année:

1999

Langue:

english

Fichier:

PDF, 327 KB

english, 1999

[IEEE 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Xian, China (2012.10.29-2012.11.1)] 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology - Atomically controlled CVD technology of group IV semiconductors for ultralarge scale integration

Murota, Junichi, Sakuraba, Masao, Tillack, Bernd

Année:

2012

Langue:

english

Fichier:

PDF, 460 KB

english, 2012

Sweat, the driving force behind normal skin: An emerging perspective on functional biology and regulatory mechanisms

Murota, Hiroyuki, Matsui, Saki, Ono, Emi, Kijima, Akiko, Kikuta, Junichi, Ishii, Masaru, Katayama, Ichiro

Journal:

Journal of Dermatological Science

Année:

2015

Langue:

english

Fichier:

PDF, 1.67 MB

english, 2015

Arsenic atomic layer doping in Si using AsH3

Yamamoto, Yuji, Kurps, Rainer, Murota, Junichi, Tillack, Bernd

Journal:

Année:

2015

Langue:

english

Fichier:

PDF, 910 KB

english, 2015

Low-temperature reduction of Ge oxide by Si and SiH4 in low-pressure H2 and Ar environment

Minami, Kaichiro, Moriya, Atsushi, Yuasa, Kazuhiro, Maeda, Kiyohiko, Yamada, Masayuki, Kunii, Yasuo, Niwano, Michio, Murota, Junichi

Journal:

Année:

2015

Langue:

english

Fichier:

PDF, 1.19 MB

english, 2015

C and Si delta doping in Ge by CH3SiH3 using reduced pressure chemical vapor deposition

Yamamoto, Yuji, Ueno, Naofumi, Sakuraba, Masao, Murota, Junichi, Mai, Andreas, Tillack, Bernd

Journal:

ECS Journal of Solid State Science and Technology

Année:

2016

Langue:

english

Fichier:

PDF, 862 KB

english, 2016

Atomically Controlled Processing for Dopant Segregation in CVD Si and Ge Epitaxial Growth

Murota, Junichi, Yamamoto, Yuji, Costina, Ioan, Tillack, Bernd, Thanh, Vinh Le, Loo, Roger, Caymax, Matty

Journal:

Année:

2018

Langue:

english

Fichier:

PDF, 1.25 MB

english, 2018

High-performance pMOSFETs with high Ge fraction strained SiGe-heterostructure channel and ultrashallow source/drain formed by selective B-doped SiGe CVD

Shinobu Takehiro, Masao Sakuraba, Junichi Murota, Toshiaki Tsuchiya

Journal:

Electrical Engineering in Japan

Année:

2008

Langue:

english

Fichier:

PDF, 903 KB

english, 2008

Selective germanium epitaxial growth on silicon using CVD technology with ultra-pure gases

Kobayashi, Shin-ichi, Cheng, Min-Lin, Kohlhase, Armin, Sato, Taketoshi, Murota, Junichi, Mikoshiba, Nobou

Journal:

Kato, Manabu, Sato, Taketoshi, Murota, Junichi, Mikoshiba, Nobuo

Année:

1990

Langue:

english

Fichier:

PDF, 265 KB

english, 1990

Nucleation control of silicon on silicon oxide for low-temperature CVD and silicon selective epitaxy

Journal:

Masao Sakuraba, Junichi Murota, Nobuo Mikoshiba, Shoichi Ono

Année:

1990

Langue:

english

Fichier:

PDF, 579 KB

english, 1990

Atomic layer epitaxy of germanium on silicon using flash heating chemical vapor deposition

Journal:

Manabu Kato, Junichi Murota, Shoichi Ono

Année:

1991

Langue:

english

Fichier:

PDF, 316 KB

english, 1991

Control of composition and deposition rate in Si-Ge CVD epitaxy on Si

Journal:

Année:

1991

Langue:

english

Fichier:

PDF, 356 KB

english, 1991

Atomic-layer epitaxy control of Ge and Si in flash-heating CVD using GeH4 and SiH4 gases

Masao Sakuraba, Junichi Murota, Takeshi Watanabe, Yasuji Sawada, Shoichi Ono

Journal:

Année:

1994

Langue:

english

Fichier:

PDF, 377 KB

english, 1994

Substrate orientation dependence of self-limited atomic-layer etching of Si with chlorine adsorption and low-energy Ar+ irradiation

Koji Suzue, Takashi Matsuura, Junichi Murota, Yasuji Sawada, Tadahiro Ohmi

Journal:

Masaki Fujiu, Kazuya Takahashi, Masao Sakuraba, Junichi Murota

Année:

1994

Langue:

english

Fichier:

PDF, 443 KB

english, 1994

Effect of carbon on the thermal stability of a Si atomic layer on Ge(1 0 0)

Journal:

Yosuke Shimamune, Masao Sakuraba, Junichi Murota, Bernd Tillack

Année:

2004

Langue:

english

Fichier:

PDF, 136 KB

english, 2004

Formation of heavily P-doped Si epitaxial film on Si(1 0 0) by multiple atomic-layer doping technique

Journal:

Année:

2004

Langue:

english

Fichier:

PDF, 114 KB

english, 2004

Ar plasma irradiation effects in atomically controlled Si epitaxial growth

Daisuke Muto, Masao Sakuraba, Takuya Seino, Junichi Murota

Journal:

Doohwan Lee, Shinobu Takehiro, Masao Sakuraba, Junichi Murota, Toshiaki Tsuchiya

Année:

2004

Langue:

english

Fichier:

PDF, 151 KB

english, 2004

Fabrication of 0.12 μm pMOSFETs on high Ge fraction Si/Si1−xGex/Si(1 0 0) heterostructure with ultrashallow source/drain formed using B-doped SiGe CVD

Journal:

Yasuo Kunii, Yasuhiro Inokuchi, Atsushi Moriya, Harushige Kurokawa, Junichi Murota

Année:

2004

Langue:

english

Fichier:

PDF, 312 KB

english, 2004

In situ B doping of SiGe(C) using BCl3 in ultraclean hot-wall LPCVD

Journal:

Année:

2004

Langue:

english

Fichier:

PDF, 207 KB

english, 2004

Si epitaxial growth on atomic-order nitrided Si(1 0 0) using electron cyclotron resonance plasma

Masaki Mori, Takuya Seino, Daisuke Muto, Masao Sakuraba, Junichi Murota

Journal:

Youngcheon Jeong, Masao Sakuraba, Junichi Murota

Année:

2005

Langue:

english

Fichier:

PDF, 210 KB

english, 2005

Electrical properties of N atomic layer doped Si epitaxial films grown by ultraclean low-pressure chemical vapor deposition

Journal:

Takehisa Kurosawa, Tomoyuki Komatsu, Masao Sakuraba, Junichi Murota

Année:

2005

Langue:

english

Fichier:

PDF, 304 KB

english, 2005

Electrical properties of W delta doped Si epitaxial films grown on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition

Journal:

Youngcheon Jeong, Masao Sakuraba, Junichi Murota

Année:

2005

Langue:

english

Fichier:

PDF, 311 KB

english, 2005

Epitaxial growth of N delta doped Si films on Si(1 0 0) by alternately supplied NH3 and SiH4

Journal:

Jintae Noh, Shinobu Takehiro, Masao Sakuraba, Junichi Murota

Année:

2004

Langue:

english

Fichier:

PDF, 248 KB

english, 2004

Relationship between impurity (B or P) and carrier concentration in SiGe(C) epitaxial film produced by thermal treatment

Journal:

Année:

2004

Langue:

english

Fichier:

PDF, 157 KB

english, 2004

Interfacial reaction and electrical properties in Ni/Si and Ni/SiGe(C) contacts

Shigeaki Zaima, Osamu Nakatsuka, Akira Sakai, Junichi Murota, Yukio Yasuda

Journal:

Année:

2004

Langue:

english

Fichier:

PDF, 317 KB

english, 2004

Heavy atomic-layer doping of B in low-temperature Si epitaxial growth on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition

Hiroki Tanno, Masao Sakuraba, Bernd Tillack, Junichi Murota

Journal:

Année:

2008

Langue:

english

Fichier:

PDF, 448 KB

english, 2008

Behavior of N atoms in atomic-order nitrided Si0.5Ge0.5(1 0 0)

Nao Akiyama, Masao Sakuraba, Bernd Tillack, Junichi Murota

Journal:

Takashi Yokogawa, Kiyohisa Ishibashi, Masao Sakuraba, Junichi Murota, Yasuhiro Inokuchi, Yasuo Kunii, Harushige Kurokawa

Année:

2008

Langue:

english

Fichier:

PDF, 318 KB

english, 2008

Self-limited growth of Si on B atomic-layer formed Ge(1 0 0) by ultraclean low-pressure CVD system

Journal:

Hang-Sup Cho, Shinobu Takehiro, Masao Sakuraba, Junichi Murota

Année:

2008

Langue:

english

Fichier:

PDF, 409 KB

english, 2008

Sidewall protection by nitrogen and oxygen in poly-Si1−xGex anisotropic etching using Cl2/N2/O2 plasma

Journal:

Katsutoshi Sugawara, Masao Sakuraba, Junichi Murota

Année:

2005

Langue:

english

Fichier:

PDF, 300 KB

english, 2005

Atomically controlled Ge epitaxial growth on Si(1 0 0) in Ar-plasma-enhanced GeH4 reaction

Journal:

Atsushi Yamada, Masao Sakuraba, Junichi Murota

Année:

2005

Langue:

english

Fichier:

PDF, 272 KB

english, 2005

Integration of Si p–i–n diodes for light emitter and detector with optical waveguides

Journal:

Année:

2005

Langue:

english

Fichier:

PDF, 215 KB

english, 2005

Heavy B atomic-layer doping characteristics in Si epitaxial growth on B adsorbed Si(1 0 0) by ultraclean low-pressure CVD system

Hiroki Tanno, Masao Sakuraba, Bernd Tillack, Junichi Murota

Journal:

Takahiro Seo, Kuniaki Takahashi, Masao Sakuraba, Junichi Murota

Année:

2009

Langue:

english

Fichier:

PDF, 355 KB

english, 2009

Improvement in negative differential conductance characteristics of hole resonant-tunneling diodes with high Ge fraction Si/strained Si1−xGex/Si(1 0 0) heterostructure

Journal:

Kuniaki Takahashi, Masao Sakuraba, Junichi Murota

Année:

2009

Langue:

english

Fichier:

PDF, 933 KB

english, 2009

Fabrication of high-Ge-fraction strained Si1−xGex/Si hole resonant tunneling diode using low-temperature Si2H6 reaction for nanometer-order ultrathin Si barriers

Journal:

Hang-Sup Cho, Masao Sakuraba, Junichi Murota

Année:

2011

Langue:

english

Fichier:

PDF, 658 KB

english, 2011

Surface reaction and B atom segregation in ECR chlorine plasma etching of B-doped Si1−xGex epitaxial films

Journal:

Atsushi Yamada, Masao Sakuraba, Junichi Murota

Année:

2006

Langue:

english

Fichier:

PDF, 172 KB

english, 2006

Photo detection characteristics of Si/Si1−xGex/Si p-i-n diodes integrated with optical waveguides

Journal:

Hiroaki Nitta, Junichi Tanabe, Masao Sakuraba, Junichi Murota

Année:

2006

Langue:

english

Fichier:

PDF, 202 KB

english, 2006

Carbon effect on strain compensation in Si1−x −yGexCy films epitaxially grown on Si(100)

Journal: